A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport
نویسندگان
چکیده
In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for I-V and C-V characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified with the measured I-V characteristics of a NWFET device. Results show a close match of the model with measured data.
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تاریخ انتشار 2007